Thin film transistor and manufacturing method therefor

A thin film transistor is provided. The thin film transistor comprises: a substrate; an active pattern comprising a nitride, the active pattern being arranged on the substrate; a protection pattern comprising a non-nitride, the protection pattern being arranged on the active pattern; a gate electrode superposed on the active pattern; and a gate insulating film between the gate electrode and the active pattern. 本发明提供薄膜晶体管。上述薄膜晶体管包括：基板；活性图案，配置于上述基板上，包括氮化物；保护图案，配置于上述活性图案上，包括非氮化物；栅电极，与上述活性电极重叠；以及栅极绝缘膜，形成于上述栅电极及上述活性图案之间。