LED and manufacturing method thereof

The invention discloses an LED and a manufacturing method thereof. The manufacturing method includes: providing a substrate; forming a buffer layer on the surface of the substrate; forming an N-type semiconductor layer on one side, away from the substrate, of the buffer layer; form a multiple-quantum-well layer on one side, away from the buffer layer, of the N-type semiconductor layer; using a PVD process to form an electron blocking layer on one side, away from the N-type semiconductor layer, of the multiple-quantum-well layer, wherein the electron blocking layer is a AlN layer; forming a P-type semiconductor layer on one side, away from the multiple-quantum-well layer, of the electron blocking layer. The manufacturing method has the advantages that after the multiple-quantum-well layer grows in a primary epitaxial growth manner, the thin AlN layer grows through the PVD process to serve as the electron blocking layer, then the P-type semiconductor layer grows in a secondary epitaxial growth manner, a good el