MOS (metal oxide semiconductor) transistor turn-on measuring device

The invention discloses an MOS (metal oxide semiconductor) transistor turn-on measuring device, comprising an MOS transistor loop under measurement, a measuring loop, and a display loop; the MOS transistor loop under measurement includes an MOS transistor under measurement, a first test resistor, a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LI GUANGJIAN, GENG SHUJIAN, ZHOU HANG, QIAO SHIBO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses an MOS (metal oxide semiconductor) transistor turn-on measuring device, comprising an MOS transistor loop under measurement, a measuring loop, and a display loop; the MOS transistor loop under measurement includes an MOS transistor under measurement, a first test resistor, a 12 V power supply, and a protective diode; the measuring loop includes a current sensing amplifier, a first test resistor, a second test resistor, an adjustable test resistor, an instrument amplifier, and a fourth test resistor; the display loop includes a 5 V power supply, an LED, a test resistor, a triode, a D trigger, a key switch, an analog switch and a display screen. The MOS transistor turn-on measuring device has high measuring precision and high speed for measuring MOS transistor turn-on voltage, allows the time of detecting mass MOS transistors to be shortened effectively with the efficiency improved, is low in manufacture cost and small in size, may satisfy the measurement of various packaged MOS transist