Semiconductor device structure and method for forming the same

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a metal gate electrode structure over the semiconductor substrate. The semiconductor device structure includes an insulating layer over the semiconductor substrate and surrounding the metal gate electrode structure. The semiconductor device structure includes a first metal nitride layer over a first top surface of the metal gate electrode structure and in direct contact with the metal gate electrode structure. The first metal nitride layer includes a nitride material of the metal gate electrode structure. The invention further provides a method for forming the semiconductor device structure. 本发明提供了半导体器件结构。半导体器件结构包括半导体衬底。半导体器件结构包括位于半导体衬底上方的金属栅电极结构。半导体器件结构包括位于半导体衬底上方并且环绕金属栅电极结构的绝缘层。半导体器件结构包括位于金属栅电极结构的第顶表面上方并且与金属栅电极结构直接接触的第金属氮化物层。第金属氮化物层包括金属栅电极结构的氮化物材料。本发明还提供了形成半导体器件结构的方法。