Forming body with high silicon dioxide content and its producing process
PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a...
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| creator | S. MORITZ W. ENGLISCH |
| description | PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 mu m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of lambda =190-2,650 nm; and which has a density of at least 2.215 g/cm3. The transparent surface area is formed from base material by heating it to a temperature above 1,650 DEG C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of lambda =6001-2,650 nm is at least 60% for a layer thickness of 1 mm. |
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Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 mu m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of lambda =190-2,650 nm; and which has a density of at least 2.215 g/cm3. The transparent surface area is formed from base material by heating it to a temperature above 1,650 DEG C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of lambda =6001-2,650 nm is at least 60% for a layer thickness of 1 mm.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; ARTIFICIAL STONE ; CASTING ; CEMENTS ; CERAMICS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; COLORIMETRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CRYSTAL GROWTH ; FOUNDRY MOULDING ; GLASS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; LIME, MAGNESIA ; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; METALLURGY ; MINERAL OR SLAG WOOL ; PERFORMING OPERATIONS ; PHYSICS ; POWDER METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; RADIATION PYROMETRY ; REFINING BY ZONE-MELTING OF MATERIAL ; REFRACTORIES ; SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SLAG ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TESTING ; TRANSPORTING ; TREATMENT OF NATURAL STONE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WORKING CEMENT, CLAY, OR STONE</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010606&DB=EPODOC&CC=CN&NR=1066696C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010606&DB=EPODOC&CC=CN&NR=1066696C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>S. MORITZ</creatorcontrib><creatorcontrib>W. ENGLISCH</creatorcontrib><title>Forming body with high silicon dioxide content and its producing process</title><description>PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 mu m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of lambda =190-2,650 nm; and which has a density of at least 2.215 g/cm3. The transparent surface area is formed from base material by heating it to a temperature above 1,650 DEG C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of lambda =6001-2,650 nm is at least 60% for a layer thickness of 1 mm.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>ARTIFICIAL STONE</subject><subject>CASTING</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>COLORIMETRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CRYSTAL GROWTH</subject><subject>FOUNDRY MOULDING</subject><subject>GLASS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>LIME, MAGNESIA</subject><subject>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>POWDER METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>RADIATION PYROMETRY</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>REFRACTORIES</subject><subject>SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF NATURAL STONE</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WORKING CEMENT, CLAY, OR STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0EKwjAQAHPxIOof9gNCRQh4DpaePPVeYrI2C3U3dFfU31vBB3iaOcysXdfKfCce4Sr5DU-yAoXGAkoTJWHIJC_KCIsbskHkDGQKdZb8SN9xsYSqW7e6xUlx9-PGQXvuQ7fHKgNqjQkZbQiXQ-O9P_kQjn8kH0lYNDY</recordid><startdate>20010606</startdate><enddate>20010606</enddate><creator>S. MORITZ</creator><creator>W. ENGLISCH</creator><scope>EVB</scope></search><sort><creationdate>20010606</creationdate><title>Forming body with high silicon dioxide content and its producing process</title><author>S. MORITZ ; W. ENGLISCH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1066696CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>ARTIFICIAL STONE</topic><topic>CASTING</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>COLORIMETRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CRYSTAL GROWTH</topic><topic>FOUNDRY MOULDING</topic><topic>GLASS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>LIME, MAGNESIA</topic><topic>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>POWDER METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>RADIATION PYROMETRY</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>REFRACTORIES</topic><topic>SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF NATURAL STONE</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WORKING CEMENT, CLAY, OR STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>S. MORITZ</creatorcontrib><creatorcontrib>W. ENGLISCH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>S. MORITZ</au><au>W. ENGLISCH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Forming body with high silicon dioxide content and its producing process</title><date>2001-06-06</date><risdate>2001</risdate><abstract>PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 mu m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of lambda =190-2,650 nm; and which has a density of at least 2.215 g/cm3. The transparent surface area is formed from base material by heating it to a temperature above 1,650 DEG C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of lambda =6001-2,650 nm is at least 60% for a layer thickness of 1 mm.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CASTING CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COLORIMETRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH FOUNDRY MOULDING GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING METALLURGY MINERAL OR SLAG WOOL PERFORMING OPERATIONS PHYSICS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE RADIATION PYROMETRY REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TESTING TRANSPORTING TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE |
| title | Forming body with high silicon dioxide content and its producing process |
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