Forming body with high silicon dioxide content and its producing process

PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a...

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Hauptverfasser: S. MORITZ, W. ENGLISCH
Format: Patent
Sprache:eng
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Zusammenfassung:PCT No. PCT/EP94/03722 Sec. 371 Date May 7, 1996 Sec. 102(e) Date May 7, 1996 PCT Filed Nov. 10, 1994 PCT Pub. No. WO95/13248 PCT Pub. Date May 18, 1995Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 mu m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of lambda =190-2,650 nm; and which has a density of at least 2.215 g/cm3. The transparent surface area is formed from base material by heating it to a temperature above 1,650 DEG C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of lambda =6001-2,650 nm is at least 60% for a layer thickness of 1 mm.