Over-mold plastic packaged wide band-gap power transistors and mmics

A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low. 种晶体管封装，包括：引线框；附接到所述引线框的宽带隙晶体管，以及包围所述引线框和所述宽带隙晶体管的包覆成型件。所述宽带隙晶体管在高达3.8GHz的频率工作时具有大于150W的峰值输出功率。在晶体管封装中使用包覆成型件连同宽带隙晶体管，允许晶体管封装获得极高的效率、增益和带宽，同时保持晶体管封装的制造成本较低。