Self-balanced terahertz Schottky barrier diode

Self-balanced terahertz Schottky barrier diode

The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer...

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Hauptverfasser: REN TIANHAO, LI YUKUN, JIN SAISAI, ZHANG YONG, WU CHENGKAI
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator REN TIANHAO
LI YUKUN
JIN SAISAI
ZHANG YONG
WU CHENGKAI
description The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer, a heavily doped n ++ GaAs layer, a lightly doped n-GaAs layer and a SiO2 layer. The SiO2 layer is provided with a metal anode and a metal cathode, with the metal anode forming Schottky contacts with the n-GaAs layer and the metal cathode forming Ohm contacts with the n ++ GaAs layer. The diode comprises two Schottky knots, and the two input ends to the two Schottky knots differ in phase by 180 degrees. The self-balanced terahertz Schottky barrier diode of the invention is capable of achieving an internally equalized structure inside a tube, and compared with a traditional externally equalized diode, the diode of the invention can find applications particularly to the high ends of the terahertz band. In addition,
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN106653868A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN106653868A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN106653868A3</originalsourceid><addsrcrecordid>eNrjZNALTs1J001KzEnMS05NUShJLUrMSC0qqVIITs7ILynJrlRISiwqykwtUkjJzE9J5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgZmZqbGFmYWjsbEqAEA_iAqqg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Self-balanced terahertz Schottky barrier diode</title><source>esp@cenet</source><creator>REN TIANHAO ; LI YUKUN ; JIN SAISAI ; ZHANG YONG ; WU CHENGKAI</creator><creatorcontrib>REN TIANHAO ; LI YUKUN ; JIN SAISAI ; ZHANG YONG ; WU CHENGKAI</creatorcontrib><description>The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer, a heavily doped n ++ GaAs layer, a lightly doped n-GaAs layer and a SiO2 layer. The SiO2 layer is provided with a metal anode and a metal cathode, with the metal anode forming Schottky contacts with the n-GaAs layer and the metal cathode forming Ohm contacts with the n ++ GaAs layer. The diode comprises two Schottky knots, and the two input ends to the two Schottky knots differ in phase by 180 degrees. The self-balanced terahertz Schottky barrier diode of the invention is capable of achieving an internally equalized structure inside a tube, and compared with a traditional externally equalized diode, the diode of the invention can find applications particularly to the high ends of the terahertz band. In addition,</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170510&amp;DB=EPODOC&amp;CC=CN&amp;NR=106653868A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170510&amp;DB=EPODOC&amp;CC=CN&amp;NR=106653868A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>REN TIANHAO</creatorcontrib><creatorcontrib>LI YUKUN</creatorcontrib><creatorcontrib>JIN SAISAI</creatorcontrib><creatorcontrib>ZHANG YONG</creatorcontrib><creatorcontrib>WU CHENGKAI</creatorcontrib><title>Self-balanced terahertz Schottky barrier diode</title><description>The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer, a heavily doped n ++ GaAs layer, a lightly doped n-GaAs layer and a SiO2 layer. The SiO2 layer is provided with a metal anode and a metal cathode, with the metal anode forming Schottky contacts with the n-GaAs layer and the metal cathode forming Ohm contacts with the n ++ GaAs layer. The diode comprises two Schottky knots, and the two input ends to the two Schottky knots differ in phase by 180 degrees. The self-balanced terahertz Schottky barrier diode of the invention is capable of achieving an internally equalized structure inside a tube, and compared with a traditional externally equalized diode, the diode of the invention can find applications particularly to the high ends of the terahertz band. In addition,</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALTs1J001KzEnMS05NUShJLUrMSC0qqVIITs7ILynJrlRISiwqykwtUkjJzE9J5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgZmZqbGFmYWjsbEqAEA_iAqqg</recordid><startdate>20170510</startdate><enddate>20170510</enddate><creator>REN TIANHAO</creator><creator>LI YUKUN</creator><creator>JIN SAISAI</creator><creator>ZHANG YONG</creator><creator>WU CHENGKAI</creator><scope>EVB</scope></search><sort><creationdate>20170510</creationdate><title>Self-balanced terahertz Schottky barrier diode</title><author>REN TIANHAO ; LI YUKUN ; JIN SAISAI ; ZHANG YONG ; WU CHENGKAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106653868A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>REN TIANHAO</creatorcontrib><creatorcontrib>LI YUKUN</creatorcontrib><creatorcontrib>JIN SAISAI</creatorcontrib><creatorcontrib>ZHANG YONG</creatorcontrib><creatorcontrib>WU CHENGKAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>REN TIANHAO</au><au>LI YUKUN</au><au>JIN SAISAI</au><au>ZHANG YONG</au><au>WU CHENGKAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Self-balanced terahertz Schottky barrier diode</title><date>2017-05-10</date><risdate>2017</risdate><abstract>The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer, a heavily doped n ++ GaAs layer, a lightly doped n-GaAs layer and a SiO2 layer. The SiO2 layer is provided with a metal anode and a metal cathode, with the metal anode forming Schottky contacts with the n-GaAs layer and the metal cathode forming Ohm contacts with the n ++ GaAs layer. The diode comprises two Schottky knots, and the two input ends to the two Schottky knots differ in phase by 180 degrees. The self-balanced terahertz Schottky barrier diode of the invention is capable of achieving an internally equalized structure inside a tube, and compared with a traditional externally equalized diode, the diode of the invention can find applications particularly to the high ends of the terahertz band. In addition,</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Self-balanced terahertz Schottky barrier diode
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T23%3A24%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=REN%20TIANHAO&rft.date=2017-05-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN106653868A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true