Self-balanced terahertz Schottky barrier diode

The invention belongs to the technical field of terahertz components and more particularly, to a terahertz Schottky barrier diode with self-balanced function. The diode comprises the following elements that are laminated successively from the bottom to the top: a GaAs semi-insulating substrate layer, a heavily doped n ++ GaAs layer, a lightly doped n-GaAs layer and a SiO2 layer. The SiO2 layer is provided with a metal anode and a metal cathode, with the metal anode forming Schottky contacts with the n-GaAs layer and the metal cathode forming Ohm contacts with the n ++ GaAs layer. The diode comprises two Schottky knots, and the two input ends to the two Schottky knots differ in phase by 180 degrees. The self-balanced terahertz Schottky barrier diode of the invention is capable of achieving an internally equalized structure inside a tube, and compared with a traditional externally equalized diode, the diode of the invention can find applications particularly to the high ends of the terahertz band. In addition,