Gas flow control device and plasma etching equipment

The invention discloses a gas flow control device and plasma etching equipment. The gas flow control device comprises an inner annular pipeline, an outer annular pipeline and at least two independent pipeline systems. Each pipeline system comprises a first branch and a second branch, each first branch is connected with the inner annular pipeline, and each second branch is connected with the outer annular pipeline. The gas flow control device has advantages that by arrangement of the at least two independent pipeline systems, different gases are fed into the inner annular pipeline and the outer annular pipeline through respective pipelines prior to being distributed respectively, a distribution ratio of various gases in the inner annular pipeline and the outer annular pipe can be adjusted according to technical requirements, and mutual interference of distribution regulation of different gases in the inner annular pipeline and the outer annular pipeline is avoided. Therefore, when the gas flow control device i