Manufacture method for twin pole device resisting low dosage rate irradiation

The invention discloses a manufacture method for a twin pole device resisting low dosage rate irradiation. According to the invention, a multi-layer passivation structure employing PSG (Phosphorosilicate Glass) + SiO2 double-layer electrode isolation medium and SiO2+BPSG (Boron Phosphorosilicate Glass)+SiO2. By adopting the above structure, total number of defects in the electrode isolation medium layer is reduced substantially on one hand. On the other hand, through adsorption of positive charges of the PSG and the BPSG, accumulation of the positive changes generated in the irradiation environment on the surface of Si-SiO2 is prevented and further the low dosage rate irradiation resistance of the twin-pole device is improved. The manufacture method provided by the invention is simple in technical procedure and is compatible to Si manufacture technique that is widely applied currently, and can be used for manufacturing the twin pole device having low dosage rate irradiation resistance. 本发明公开了种抗低剂量率辐照的双极器件制造方法