N-type polycrystalline silicon for solar cell, and production method of N-type polycrystalline silicon

The invention provides N-type polycrystalline silicon for a solar cell, and a production method of the N-type polycrystalline silicon, belongs to the technical field of semiconductors, and solves the problem of large resistivity difference value of existing N-type polycrystalline silicon for the solar cell. The detection resistivity between two points with a distance of L on the surface of an N-type polycrystalline silicon ingot or an N-type polycrystalline silicon wafer for the solar cell is a detection value R, and a difference value of detection values R of any two positions on the surface of the N-type polycrystalline silicon ingot or the N-type polycrystalline silicon wafer is less than or equal to 3%; and the production method of the N-type polycrystalline silicon for the solar cell comprises the steps of material preparation, casting, irradiation, cutting and the like. A paper cup has relatively high strength and a relatively good anti-scald effect; the resistivity difference value of the N-type polycr