Metallization for a thin film component, method for the production thereof, and sputtering target

The invention relates to a metallization for a thin film component and to a method for producing a metallization. The invention further relates to a sputtering target made of a Mo-based alloy, containing Al and Ti and the usual impurities, and to a method for producing a sputtering target from an Mo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KATHREIN MARTIN, KOSTENBAUER JUDITH, WINKLER JORG, KOSTENBAUER HARALD, LEICHTFRIED GERHARD, EIDENBERGER ELISABETH, HWANG MOO SUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	The invention relates to a metallization for a thin film component and to a method for producing a metallization. The invention further relates to a sputtering target made of a Mo-based alloy, containing Al and Ti and the usual impurities, and to a method for producing a sputtering target from an Mo-based alloy. 本发明涉及种用于薄膜部件的金属镀层以及用于制造金属镀层的方法。本发明此外涉及种含Al以及Ti和常见杂质的由Mo基合金组成的溅镀靶以及种用于制造由Mo基合金组成的溅镀靶的方法。