Semiconductor device with reduced leakage current and fabricating method thereof

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YUNG-LUNG HSU, CHIN-HSUN HSIAO, CHIA-YU WEI, HSINI CHEN, SSUIANG WENG, YEN-LIANG LIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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