Semiconductor device with reduced leakage current and fabricating method thereof

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer. 本发明提供了半导体器件及其制造方法。所述半导体器件包括衬底、光敏部件、负性氧化物层、栅极介电层和传输门。光敏部件配置在衬底中以检测入射辐射。负性氧化物层位于光敏部件上方。栅极介电层位于负性氧化物层上方。传输门位于栅极介电层上方。