Method of selectively etching metal layer from microstructure

The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer. 本发明涉及蚀刻微观结构的金属层的部分的方法，该微观结构由设置在透明导电氧化物(TCO)层上的金属层构成，并且具体地涉及选择性地蚀刻金属层的部分并且不蚀刻TCO层。