Transient voltage suppression component and manufacturing method thereof

Transient voltage suppression component and manufacturing method thereof

The invention provides a transient voltage suppression (transient voltage suppression, TVS) component and a manufacturing method thereof. The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. The TVS comp...

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Hauptverfasser: LUO GUOXUAN, HUANG ZONGYI
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LUO GUOXUAN
HUANG ZONGYI
description The invention provides a transient voltage suppression (transient voltage suppression, TVS) component and a manufacturing method thereof. The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. The TVS component comprises a Zener (Zener) diode, a first PN diode and a second PN diode, wherein the first PN diode comprises an N-type lightly doped zone; the N-type lightly doped zone is formed in an N-type well, is not connected with a P-type lightly doped zone and surrounds the P-type lightly doped zone, wherein the N-type lightly doped zone is provided with an inner ring surface and an outer ring surface; and the shortest distance from any point of the inner ring surface to the P-type lightly doped zone is smaller than that from any point of the outer ring surface to the periphery of the N-type well. 本发明提出种瞬时电压抑制(transient voltage suppression,TVS)元件及其制造方法。TVS元件限制其中的两端点间的压差不超过限制电压，以保护受保护元件。TVS元件包括齐纳(Zener)二极管、第PN二极管、与第二P
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The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. The TVS component comprises a Zener (Zener) diode, a first PN diode and a second PN diode, wherein the first PN diode comprises an N-type lightly doped zone; the N-type lightly doped zone is formed in an N-type well, is not connected with a P-type lightly doped zone and surrounds the P-type lightly doped zone, wherein the N-type lightly doped zone is provided with an inner ring surface and an outer ring surface; and the shortest distance from any point of the inner ring surface to the P-type lightly doped zone is smaller than that from any point of the outer ring surface to the periphery of the N-type well. 本发明提出种瞬时电压抑制(transient voltage suppression,TVS)元件及其制造方法。TVS元件限制其中的两端点间的压差不超过限制电压，以保护受保护元件。TVS元件包括齐纳(Zener)二极管、第PN二极管、与第二P</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170308&amp;DB=EPODOC&amp;CC=CN&amp;NR=106486474A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170308&amp;DB=EPODOC&amp;CC=CN&amp;NR=106486474A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LUO GUOXUAN</creatorcontrib><creatorcontrib>HUANG ZONGYI</creatorcontrib><title>Transient voltage suppression component and manufacturing method thereof</title><description>The invention provides a transient voltage suppression (transient voltage suppression, TVS) component and a manufacturing method thereof. The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transient voltage suppression component and manufacturing method thereof
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