Transient voltage suppression component and manufacturing method thereof
The invention provides a transient voltage suppression (transient voltage suppression, TVS) component and a manufacturing method thereof. The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. The TVS comp...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a transient voltage suppression (transient voltage suppression, TVS) component and a manufacturing method thereof. The TVS component limits a voltage difference between two endpoints to be smaller than or equal to limiting voltage to protect a protected component. The TVS component comprises a Zener (Zener) diode, a first PN diode and a second PN diode, wherein the first PN diode comprises an N-type lightly doped zone; the N-type lightly doped zone is formed in an N-type well, is not connected with a P-type lightly doped zone and surrounds the P-type lightly doped zone, wherein the N-type lightly doped zone is provided with an inner ring surface and an outer ring surface; and the shortest distance from any point of the inner ring surface to the P-type lightly doped zone is smaller than that from any point of the outer ring surface to the periphery of the N-type well.
本发明提出种瞬时电压抑制(transient voltage suppression,TVS)元件及其制造方法。TVS元件限制其中的两端点间的压差不超过限制电压,以保护受保护元件。TVS元件包括齐纳(Zener)二极管、第PN二极管、与第二P |
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