CMOS image sensor with peninsular ground contracts and method of manufacturing the same

A complementary metal oxide semiconductor (CMOS) image sensor with peninsular ground contacts includes (a) a substrate having a plurality of pixel units arranged in rows of pixel units and (b) a plurality of ground contacts for grounding the pixel units, wherein the ground contacts are formed in respective peninsular regions of the substrate within respective ones of the pixel units, and wherein each of the peninsular regions is only partly enclosed by a shallow trench isolation and the peninsular regions have alternating orientation along each of the rows of pixel units. 种具有半岛式接地点的互补金属氧化物半导体图像传感器，其包括(a)具有排列成像素单元列的多个像素单元的基板与(b)用于将所述像素单元接地的多个接地点，其中所述接地点分别形成于相对应的所述像素单元内的所述基板的各半岛区域中，且其中所述半岛区域的每个由浅沟槽隔离而仅部分地封闭且所述半岛区域具有沿着所述像素单元的每列交替变换的方向。