Apparatus and methods to detect semiconductor device degradation due to radiation exposure

The invention provides an apparatus and methods to detect degradation due to radiation exposure. An example method to detect circuit failure due to radiation exposure includes determining a current of a semiconductor device in an analog circuit, determining an amount of radiation to which the semiconductor device has been exposed based on the current, comparing the amount of radiation to a radiation dose threshold value, and indicating a degradation of the semiconductor device based on the comparison. 本发明描述了用于检测由于辐射暴露而引起的半导体器件劣化的装置和方法。用于检测由于辐射暴露而引起的电路故障的示例性方法包括：确定模拟电路中的半导体器件的电流，基于该电流来确定该半导体器件已被暴露于辐射的辐射量，将该辐射量与辐射剂量阈值相比较，以及基于比较结果来指示该半导体器件的劣化。