Preparation method for boron-doped graphene

The invention discloses a preparation method for boron-doped graphene. The method comprises the following steps that (1) NaCl-KCl and boron carbide are placed in a three-phase electrode quartz glass container, the container is closed and then placed in a vertical type tube furnace, the vacuum state is provided, the temperature is increased to 520-800 DEG C, and melting is conducted for 5-15 min at an argon atmosphere; (2) the melting temperature is maintained, under the ordinary pressure, working electrodes are soaked in NaCl-KCl molten salts, and electrolysis is conducted for 30-60 min at 700 DEG C; and (3) the NaCl-KCl molten salts are poured into an alumina crucible to be cooled to the room temperature, distilled water is added to dissolve all solidified salts, boron-doped graphene floating on a solution is fished out through cover glass and placed in deionized water, after water is changed for three times, drying is conducted, and the boron-doped graphene is obtained. The preparation technique is simple,