Field limiting ring terminal structure for power semiconductor device

The invention belongs to the technical field of manufacturing a semiconductor power device and especially relates to a field limiting ring terminal structure for a power semiconductor device. Two or more grooves in different thicknesses are arranged in a terminal area of the terminal structure; the grooves are tightly connected; same insulating media fill the grooves; an upper side wall of the groove in the minimal thickness is adjacent to a main structure of an active area; the bottoms of the grooves are doped, so as to form a floating field ring in the terminal area. According to the invention, a floating field ring structure at a horizontal interval is folded toward the interior of the device, so that the thickness of the shifting area in the device can be fully utilized, the cross area of the terminal can be further reduced and the use efficiency of the terminal can be increased. 本发明属于半导体功率器件制备技术领域，特别涉及种功率半导体器件的场限环终端结构。该终端结构的终端区域具有两个或两个以上的深度不等的沟槽，所述沟槽紧密相连且沟槽内填充有相同的绝缘介质，所述沟槽中深度最小的沟槽的上侧面与有源区的主结相邻，沟槽底部进行掺杂形成