Growth method for improving epitaxial yield of light emitting diode

The invention discloses a growth method for improving the epitaxial yield of a light emitting diode. The method includes steps: firstly, performing evaporation deposition on a substrate by employing PVD; secondly, growing a first 3D layer on an AlN buffer layer in a three-dimensional manner by emplo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG AIMIN, CHEN KAIXUAN, ZHUO XIANGJING, WANG YANG, CHENG WEI, JIANG WEI, LIN ZHIWEI, TONG JICHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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