Growth method for improving epitaxial yield of light emitting diode

The invention discloses a growth method for improving the epitaxial yield of a light emitting diode. The method includes steps: firstly, performing evaporation deposition on a substrate by employing PVD; secondly, growing a first 3D layer on an AlN buffer layer in a three-dimensional manner by employing MOCVD; thirdly, etching the first 3D layer on side surfaces of a PSS pattern and on the plane of the substrate until the first 3D layer on the side surfaces of the PSS pattern are completely etched; fourthly, performing cooling, and continuously growing a second 3D layer in a three-dimensional manner; fifthly, etching the second 3D layer on the side surfaces of the PSS pattern and on the plane of the substrate until the second 3D layer on the side surfaces of the PSS pattern are completely etched, wherein the AlN buffer layer on the side surfaces of the PSS pattern is partly etched, and the second 3D layer on the plane is partly etched; sixthly, repeating the above steps for multiple times in a circulating man