Silicon wafer and preparation method and apparatus thereof

The present invention relates to the photovoltaic field, and specifically discloses a silicon wafer. A plurality of shear mark patterns that are arranged along a first direction are on a cut surface of the silicon wafer; and the shear mark patterns are formed by connecting a plurality of line marks in a bending manner or in a cross manner. According to the foregoing silicon wafer, because the shear mark patterns are formed by connecting a plurality of line marks in a bending manner or in a cross manner, an effective light trapping structure can be formed after a conventional acid-base texturing technology, so that a diamond wire cutting technology is compatible with the conventional acid-base texturing technology. The present invention further discloses a preparation method of the foregoing silicon wafer and a silicon wafer wire cutting apparatus. 本发明涉及光伏领域，具体公开了种硅片，该硅片的切割面上具有沿第方向排布的若干切痕图案；切痕图案由若干线痕弯折连接或交叉连接。上述硅片，由于其切痕图案由若干线痕弯折连接或交叉连接，在经过常规的酸碱制绒工艺之后，可以形成有效的陷光结构，从而使金刚线切割工艺与常规酸碱制绒工艺兼容。本发明还公开了种上述硅片的制备方法及种硅片线切割装置