Multi-element alloy thin-film resistor, preparation method and multi-element target material
The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target materi...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DIAO KEMING |
| description | The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10 Pa, inflating an ion source with argon with working pressure intensity of 2.0*10 Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN106282944A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN106282944A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN106282944A3</originalsourceid><addsrcrecordid>eNqNy7sKwkAQRuFtLER9h7F3QWMIWkpQbLSyFMJg_piF2Qu7Y-Hb29jYWZ3mO1Nzv7xEnYXAIyixSHyTji7YwYmnjOKKxryilJE4s7oYyEPH2BOHnvzPrpyfUPKsyI5lbiYDS8Hi25lZno639myRYoeS-IEA7drrZt1Uu2pf14ftP-YD7QA8Tg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Multi-element alloy thin-film resistor, preparation method and multi-element target material</title><source>esp@cenet</source><creator>DIAO KEMING</creator><creatorcontrib>DIAO KEMING</creatorcontrib><description>The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10<-4> Pa, inflating an ion source with argon with working pressure intensity of 2.0*10<-2> Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel</description><language>chi ; eng</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; RESISTORS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170104&DB=EPODOC&CC=CN&NR=106282944A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170104&DB=EPODOC&CC=CN&NR=106282944A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DIAO KEMING</creatorcontrib><title>Multi-element alloy thin-film resistor, preparation method and multi-element target material</title><description>The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10<-4> Pa, inflating an ion source with argon with working pressure intensity of 2.0*10<-2> Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>RESISTORS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7sKwkAQRuFtLER9h7F3QWMIWkpQbLSyFMJg_piF2Qu7Y-Hb29jYWZ3mO1Nzv7xEnYXAIyixSHyTji7YwYmnjOKKxryilJE4s7oYyEPH2BOHnvzPrpyfUPKsyI5lbiYDS8Hi25lZno639myRYoeS-IEA7drrZt1Uu2pf14ftP-YD7QA8Tg</recordid><startdate>20170104</startdate><enddate>20170104</enddate><creator>DIAO KEMING</creator><scope>EVB</scope></search><sort><creationdate>20170104</creationdate><title>Multi-element alloy thin-film resistor, preparation method and multi-element target material</title><author>DIAO KEMING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106282944A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>RESISTORS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>DIAO KEMING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DIAO KEMING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Multi-element alloy thin-film resistor, preparation method and multi-element target material</title><date>2017-01-04</date><risdate>2017</risdate><abstract>The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10<-4> Pa, inflating an ion source with argon with working pressure intensity of 2.0*10<-2> Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN106282944A |
| source | esp@cenet |
| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY RESISTORS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | Multi-element alloy thin-film resistor, preparation method and multi-element target material |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T01%3A43%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DIAO%20KEMING&rft.date=2017-01-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN106282944A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |