Multi-element alloy thin-film resistor, preparation method and multi-element target material

The invention relates to a multi-element alloy thin-film resistor, a preparation method and a multi-element target material. The preparation method includes the following steps of preparing the multi-element target material containing nickel, chromium, manganese and silicon, fixing the target material to a target table, fixing a base material with prepared photoresist to a rotary working table, conducting vacuumizing to make the vacuum degree not larger than 5*10 Pa, inflating an ion source with argon with working pressure intensity of 2.0*10 Pa, conducting glow discharge to generate plasmas, conducting leading-out, bundling, accelerating and neutralizing to form an argon ion bundle to attack the multi-element target material on the target table, depositing sputtered particles on the surface of the base material to form a multi-element alloy thin film, and removing residual photoresist to obtain the multi-element alloy thin-film resistor. By means of the multi-element target material containing nickel