Method for reducing defect generation in SiC crystal growth

The invention relates to a method for reducing defect generation in SiC crystal growth. Further improvement is made on the basis of silicon carbide single crystal growth by common physical vapor transport technique, and the method includes: (1) preparing graphite glue; (2) applying the graphite glue...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG KUN, ZHENG QINGCHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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