Method for reducing defect generation in SiC crystal growth

The invention relates to a method for reducing defect generation in SiC crystal growth. Further improvement is made on the basis of silicon carbide single crystal growth by common physical vapor transport technique, and the method includes: (1) preparing graphite glue; (2) applying the graphite glue uniformly to a seed crystal non-growth surface and a bonding surface of a graphite plate with single-side blade, then overlapping the graphite glue coated two surfaces together, and bonding the graphite plate and the seed crystal well with as few graphite glue as possible; and (3) performing heating to cure the graphite glue. The method provided by the invention solves the problem that the thermal conductivity difference between air vents and a high temperature carbonized adhesive can result in non-uniform temperature distribution on the back of the seed crystal, reduces the hexagonal cavity defect caused by back evaporation in the process of crystal growth, and greatly improves the quality and yield of silicon ca