Film bulk acoustic resonator based on monocrystalline lithium niobate chip and preparation method thereof

The invention relates to the field of microelectronic devices, particularly relates to a film bulk acoustic resonator based on monocrystalline lithium niobate chip piezoelectric material and a preparation method of the resonator, and aims at overcoming the disadvantage of low electromechanical coupling coefficient of the existing film bulk acoustic resonator. The film bulk acoustic resonator comprises a Si substrate, a patterned bonding adhesive supporting layer which is formed on the Si substrate, a monocrystalline lithium niobate chip which is arranged on the bonding adhesive supporting layer, a lower electrode layer which is arranged in the gap of the bonding adhesive and adhered on the lower surface of the lithium niobate chip and an upper electrode layer which is formed on the upper surface of the lithium niobate chip, wherein the upper electrode layer and the lower electrode layer are correspondingly arranged. According to the film bulk acoustic resonator, high frequency can be met, and extremely high e