Phase change memory device and manufacturing method thereof

Phase change memory device and manufacturing method thereof

The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a di...

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1. Verfasser: TAO YIFANG
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a dielectric layer is formed to cover the top surface of the heater; the dielectric layer is patterned to form multiple grooves, and the top surface of the heater is exposed via the multiple grooves; a first barrier layer is formed on one inner-side surface of the multiple grooves; a phase change material is deposited in the groove; part of the phase change material is removed to expose the first barrier layer located on one side wall of the groove; and a top electrode is formed in the groove to cover the phase change material. According to the above manufacturing method, one mask is only needed to complete manufacturing of the phase change memory device. The invention also discloses a phase change memory device. 种相变化存
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN106206938A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN106206938A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN106206938A3</originalsourceid><addsrcrecordid>eNrjZLAOyEgsTlVIzkjMS09VyE3NzS-qVEhJLctMTlVIzEtRyE3MK01LTC4pLcrMSwfKl2TkpyiUZKQWpean8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwMzIwMzS2MLR2Ni1AAArF8vfQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Phase change memory device and manufacturing method thereof</title><source>esp@cenet</source><creator>TAO YIFANG</creator><creatorcontrib>TAO YIFANG</creatorcontrib><description>The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a dielectric layer is formed to cover the top surface of the heater; the dielectric layer is patterned to form multiple grooves, and the top surface of the heater is exposed via the multiple grooves; a first barrier layer is formed on one inner-side surface of the multiple grooves; a phase change material is deposited in the groove; part of the phase change material is removed to expose the first barrier layer located on one side wall of the groove; and a top electrode is formed in the groove to cover the phase change material. According to the above manufacturing method, one mask is only needed to complete manufacturing of the phase change memory device. The invention also discloses a phase change memory device. 种相变化存</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161207&amp;DB=EPODOC&amp;CC=CN&amp;NR=106206938A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161207&amp;DB=EPODOC&amp;CC=CN&amp;NR=106206938A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAO YIFANG</creatorcontrib><title>Phase change memory device and manufacturing method thereof</title><description>The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a dielectric layer is formed to cover the top surface of the heater; the dielectric layer is patterned to form multiple grooves, and the top surface of the heater is exposed via the multiple grooves; a first barrier layer is formed on one inner-side surface of the multiple grooves; a phase change material is deposited in the groove; part of the phase change material is removed to expose the first barrier layer located on one side wall of the groove; and a top electrode is formed in the groove to cover the phase change material. According to the above manufacturing method, one mask is only needed to complete manufacturing of the phase change memory device. The invention also discloses a phase change memory device. 种相变化存</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOyEgsTlVIzkjMS09VyE3NzS-qVEhJLctMTlVIzEtRyE3MK01LTC4pLcrMSwfKl2TkpyiUZKQWpean8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwMzIwMzS2MLR2Ni1AAArF8vfQ</recordid><startdate>20161207</startdate><enddate>20161207</enddate><creator>TAO YIFANG</creator><scope>EVB</scope></search><sort><creationdate>20161207</creationdate><title>Phase change memory device and manufacturing method thereof</title><author>TAO YIFANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106206938A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAO YIFANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAO YIFANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Phase change memory device and manufacturing method thereof</title><date>2016-12-07</date><risdate>2016</risdate><abstract>The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a dielectric layer is formed to cover the top surface of the heater; the dielectric layer is patterned to form multiple grooves, and the top surface of the heater is exposed via the multiple grooves; a first barrier layer is formed on one inner-side surface of the multiple grooves; a phase change material is deposited in the groove; part of the phase change material is removed to expose the first barrier layer located on one side wall of the groove; and a top electrode is formed in the groove to cover the phase change material. According to the above manufacturing method, one mask is only needed to complete manufacturing of the phase change memory device. The invention also discloses a phase change memory device. 种相变化存</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Phase change memory device and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A15%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAO%20YIFANG&rft.date=2016-12-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN106206938A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true