Light-emitting diode for improving ITO current expansion and manufacturing method thereof

Light-emitting diode for improving ITO current expansion and manufacturing method thereof

The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is compos...

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Hauptverfasser: CHEN KAIXUAN, ZHUO XIANGJING, WANG YANG, ZHANG YONG, JIANG WEI, FANG TIANZU, LIN ZHIWEI, TONG JICHU
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHEN KAIXUAN
ZHUO XIANGJING
WANG YANG
ZHANG YONG
JIANG WEI
FANG TIANZU
LIN ZHIWEI
TONG JICHU
description The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the ad
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN106206893A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN106206893A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN106206893A3</originalsourceid><addsrcrecordid>eNqNykEKwjAQQNFsXIh6h_EAhWqh2KUURUF0042rEpJJGzAzIZmKx5eCB3D14fOW6nnzwygFBi_iaQDr2SI4TuBDTPye37V7gJlSQhLAT9SUPRNoshA0TU4bmdLsAsrIFmTEhOzWauH0K-Pm15Xank9deykwco85aoOE0rf3XVnvy_rQVMfqH_MFBvo7DA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Light-emitting diode for improving ITO current expansion and manufacturing method thereof</title><source>esp@cenet</source><creator>CHEN KAIXUAN ; ZHUO XIANGJING ; WANG YANG ; ZHANG YONG ; JIANG WEI ; FANG TIANZU ; LIN ZHIWEI ; TONG JICHU</creator><creatorcontrib>CHEN KAIXUAN ; ZHUO XIANGJING ; WANG YANG ; ZHANG YONG ; JIANG WEI ; FANG TIANZU ; LIN ZHIWEI ; TONG JICHU</creatorcontrib><description>The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the ad</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161207&amp;DB=EPODOC&amp;CC=CN&amp;NR=106206893A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161207&amp;DB=EPODOC&amp;CC=CN&amp;NR=106206893A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN KAIXUAN</creatorcontrib><creatorcontrib>ZHUO XIANGJING</creatorcontrib><creatorcontrib>WANG YANG</creatorcontrib><creatorcontrib>ZHANG YONG</creatorcontrib><creatorcontrib>JIANG WEI</creatorcontrib><creatorcontrib>FANG TIANZU</creatorcontrib><creatorcontrib>LIN ZHIWEI</creatorcontrib><creatorcontrib>TONG JICHU</creatorcontrib><title>Light-emitting diode for improving ITO current expansion and manufacturing method thereof</title><description>The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the ad</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNykEKwjAQQNFsXIh6h_EAhWqh2KUURUF0042rEpJJGzAzIZmKx5eCB3D14fOW6nnzwygFBi_iaQDr2SI4TuBDTPye37V7gJlSQhLAT9SUPRNoshA0TU4bmdLsAsrIFmTEhOzWauH0K-Pm15Xank9deykwco85aoOE0rf3XVnvy_rQVMfqH_MFBvo7DA</recordid><startdate>20161207</startdate><enddate>20161207</enddate><creator>CHEN KAIXUAN</creator><creator>ZHUO XIANGJING</creator><creator>WANG YANG</creator><creator>ZHANG YONG</creator><creator>JIANG WEI</creator><creator>FANG TIANZU</creator><creator>LIN ZHIWEI</creator><creator>TONG JICHU</creator><scope>EVB</scope></search><sort><creationdate>20161207</creationdate><title>Light-emitting diode for improving ITO current expansion and manufacturing method thereof</title><author>CHEN KAIXUAN ; ZHUO XIANGJING ; WANG YANG ; ZHANG YONG ; JIANG WEI ; FANG TIANZU ; LIN ZHIWEI ; TONG JICHU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106206893A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN KAIXUAN</creatorcontrib><creatorcontrib>ZHUO XIANGJING</creatorcontrib><creatorcontrib>WANG YANG</creatorcontrib><creatorcontrib>ZHANG YONG</creatorcontrib><creatorcontrib>JIANG WEI</creatorcontrib><creatorcontrib>FANG TIANZU</creatorcontrib><creatorcontrib>LIN ZHIWEI</creatorcontrib><creatorcontrib>TONG JICHU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN KAIXUAN</au><au>ZHUO XIANGJING</au><au>WANG YANG</au><au>ZHANG YONG</au><au>JIANG WEI</au><au>FANG TIANZU</au><au>LIN ZHIWEI</au><au>TONG JICHU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light-emitting diode for improving ITO current expansion and manufacturing method thereof</title><date>2016-12-07</date><risdate>2016</risdate><abstract>The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the ad</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Light-emitting diode for improving ITO current expansion and manufacturing method thereof
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