Light-emitting diode for improving ITO current expansion and manufacturing method thereof

Light-emitting diode for improving ITO current expansion and manufacturing method thereof

The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is compos...

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Bibliographische Detailangaben
Hauptverfasser: CHEN KAIXUAN, ZHUO XIANGJING, WANG YANG, ZHANG YONG, JIANG WEI, FANG TIANZU, LIN ZHIWEI, TONG JICHU
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the ad