Tunneling field effect transistor capable of improving on-state current

The invention discloses a tunneling field effect transistor capable of improving an on-state current, and belongs to the fields of a logic device and a circuit in a very large scale integrated circuit. A polarized tunneling layer is formed on the top of a source region of the tunneling field effect transistor through an InN or InGaX material; a polarized electric field is formed by the polarization effect of the InN or InGaX, so that the carrier tunneling capability from the source region to a polarized tunneling region is improved, and the tunneling current in the on state is increased; since that a conductive band of an epitaxial intrinsic region in an off state is not changed, the carriers cannot cross barriers to drift and diffuse to the region, so that an off-state current of the device is effectively lowered; and the thicknesses of the epitaxial intrinsic region and the polarized tunneling region both can be 5nm or more, so that implementation of a process can be facilitated. According to the