Junction terminal structure of transverse high pressure power device

The invention provides a junction terminal structure of a transverse high pressure power device. The junction terminal structure comprises a straight line junction terminal structure and a curvature junction terminal structure. The curvature junction terminal structure comprises a drain N contact re...

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Bibliographische Detailangaben
Hauptverfasser: ZHANG BO, QIAO MING, YU YANG, ZHAN ZHENYA, XIAO QIANQIAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a junction terminal structure of a transverse high pressure power device. The junction terminal structure comprises a straight line junction terminal structure and a curvature junction terminal structure. The curvature junction terminal structure comprises a drain N contact region, a N-type drift region, a P-type substrate, gate polycrystalline silicon, a gate oxide layer, a Pwell region, a P-type region and a source P contact region; the P-type region is divided into N sub-regions 6 , 6 ...6 from the internal boundary to the external boundary, the drain N contact region, the N-type drift region, the gate polycrystalline silicon, the gate oxide layer and the Pwell region in the curvature junction terminal structure are connected with a drain N contact region, a N-type drift region, gate polycrystalline silicon, a gate oxide layer and a Pwell region in the straight line junction terminal structure respectively to form an annular structure. According to the junction terminal s