Semiconductor structure

The invention provides a semiconductor structure. The semiconductor structure comprises a substrate, first components, a dielectric layer and second components, wherein the first components are arranged in the substrate, are arranged along a first direction and are formed by oxide semiconductor materials, the dielectric layer covers the first components, and the second components are arranged on the dielectric layer, are arranged along the first direction and are used as gates of a transistor structure. 本发明提供种半导体结构，包含有基底，第元件，位于该基底中，并且该第元件沿着第方向排列，其中该第元件由氧化半导体材质所形成，介电层覆盖于该第元件上，以及第二元件，位于该介电层上，并且沿着该第方向排列，其中该第二元件则作为晶体管结构的栅极使用。