Post-CMP washiing liquid composition

The present invention relates to a composition for a post-CMP cleaning solution comprising: 0.01-10 wt% of 2-Amino-2-methyl-1-propanol; 0.1-10 wt% of quaternary ammonium hydroxide; 0.001-3 wt% of a chelation agent; 0.001-5 wt% of piperazine; and the remainder consisting of ultrapure water so that the total weight of the composition becomes 100 wt%. The composition for the post-CMP cleaning solution in accordance with the present invention is capable of effectively removing residues and contaminants with a pH value of 10 to 14, preventing redeposition from a substrate by forming a coordinate bond with organic or metallic etched residues, and inhibiting copper corrosion, thereby being able to produce an excellent semiconductor. 本发明涉及种CMP后清洗液组合物，其包含：2-氨基-2-甲基-1-丙醇(2-Amino-2-methyl-1-propanol)0.01～10wt％、季铵氢氧化物0.1～10wt％、螯合剂0.001～3wt％、哌嗪(Piperazine)0.001～5wt％以及使全部组合物总重量为100wt％的余量的超纯水，根据本发明的CMP后清洗液组合物的pH为10～14，能够有效去除残留物和污染物，与有机或金属性蚀刻残留物形成配位键，从而防止从基板再沉积，并具有抑制铜腐蚀的效果，能够制造优异的半导体。