Preparation method for selective growth vertical graphene

The invention discloses a preparation method for selective growth vertical grapheme. The preparation method for the selective growth vertical grapheme comprises the following steps that a metal mask plate and a substrate containing any one or the combination of multiple kinds of iron or cobalt or ni...

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1. Verfasser: LI KUIYANG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a preparation method for selective growth vertical grapheme. The preparation method for the selective growth vertical grapheme comprises the following steps that a metal mask plate and a substrate containing any one or the combination of multiple kinds of iron or cobalt or nickel are provided, and the metal mask plate is arranged on the substrate; the substrate with the metal mask plate is put into a physical vapor deposition system for deposition of a shielding layer; the metal mask plate is taken down, and the substrate covered with the graphical shielding layer is formed; then annealing is conducted at the temperature higher than 800 DEG C in the environment containing hydrogen; and then the substrate is put into a plasma assisted chemical vapor deposition system for growth, and hydrogen, argon and gas containing carbon element are led in. The preparation method for the selective growth vertical grapheme is few in process step, simple and easy to operate and capable of reducing cost