Gap fill using carbon-based films

Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods...

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Bibliographische Detailangaben
Hauptverfasser: BART J. VAN SCHRAVENDIJK, KAIHAN ABIDI ASHTIANI, SHU TSAI WANG, WEI TANG, JASON DAEJIN PARK
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus. 本发明提供了种使用基于碳的膜的间隙填充。提供了使用高密度等离子体化学气相沉积(HDP CVD)填充间隙的方法。根据多个实施方案,通过HDP CVD将诸如无定形碳和无定形碳化物膜之类的含碳膜沉积到衬底上的间隙内以填充间隙。这些方法可涉及在HDP CVD期间使用高氢含量的工艺气体来提供自底向上的填充。此外,还提供了相关装置。