Method for manufacturing solar cell and solar cell

This invention is characterized by including: a step for forming an n-type silicon substrate (1) having a p-n junction, and forming a p-type diffusion layer (2) on one main surface side of the n-type silicon substrate (1); a step for forming a layered film of a silicon oxide film (5) and a silicon nitride film as a passivation film on one of the first and second main surfaces of the n-type silicon substrate, on the n-type light-receiving surface (1A) side; a step for forming apertured regions (9) in the passivation film; a step for diffusing an n-type impurity and forming high-concentration diffusion regions (11) by using the passivation film as a mask for the apertured regions (9) of the passivation film; and a step for selectively forming metal electrodes (13) in the high-concentration diffusion regions (11) exposed in the apertured regions (9) of the passivation film. 本发明的特征在于，包括：在n型硅基板(1)的主面侧形成p型扩散层(2)并形成具有pn结的n型硅基板(1)的工序；在n型硅基板的第1主面以及第2主面中的作为n型的受光面1A侧的表面作为钝化膜形成氧化硅膜(5)与氮化硅膜的层叠膜的工序；在钝化膜形成开口区域(9)的工序；对钝化膜的开口