Semiconductor device

Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern. 本公开涉及种半导体器件。该半导体器件包括衬底、衬底上的有源图案、与有源图案交叉的栅电极和栅电极上的封盖结构。封盖结构包括顺序层叠在栅电极上的第封盖图案和第二封盖图案。第二封盖图案完全覆盖第封盖图案的顶表面，第二封盖图案的介电常数大于第封盖图案的介电常数。