Cleaning method for germanium single crystal polished wafer

The invention relates to a cleaning method for a semiconductor wafer, in particular to a cleaning method for a germanium single crystal polished wafer. The cleaning method for the germanium single crystal polished wafer, which is disclosed by the invention, is characterized by comprising the following steps of (1) SPM cleaning: preparing cleaning solution by utilizing concentrated sulfuric acid with the concentration of 95%-98% and hydrogen peroxide with the concentration of 30%-32% according to the volume ratio of 7 to 1; (2) SOM cleaning: placing the germanium polished wafer which is cleaned in the step (1) into cleaning solution which is formed by mixing the concentrated sulfuric acid with the concentration of 95%-98%, ozone water with the concentration of 10 mg/L and deionized water according to the volume ratio of 1 to 1 to 4; and (3) APM cleaning: cleaning the germanium polished wafer which is cleaned in the step (2) into the cleaning solution which is formed by mixing the ammonium hydroxide with the co