BiCMOS integration circuit manufacturing method

The invention provides a BiCMOS integration circuit manufacturing method. The method comprises the following steps of forming a first oxide layer on a substrate surface, wherein a substrate includes a well region and a collecting area; forming a first photoresist layer on a first oxide layer surface; taking the first photoresist layer as a mask film, and carrying out ion implantation on a preset area of the collecting area so as to form a first ion implantation area; removing the first photoresist layer; removing the first oxide layer; and forming a second oxide layer on the substrate surface. By using the BiCMOS integration circuit manufacturing method of the invention, a qualified rate of a BiCMOS integration circuit can be increased. 本发明提供种BiCMOS集成电路制作方法，包括：在衬底的表面形成第氧化层，衬底包括阱区和集电区；在第氧化层表面形成第光刻胶层；以第光刻胶层为掩膜，对集电区的预设区域进行离子注入，形成第离子注入区；去除第光刻胶层；去除第氧化层；在衬底的表面形成第二氧化层。本发明提供的BiCMOS集成电路制作方法，能够提高BiCMOS集成电路的合格率。