AlN buffer layer for light emitting diode and manufacturing method thereof

The invention discloses an AlN buffer layer for a light emitting diode. The AlN buffer layer grows on a substrate and is formed by AlN material layers and AlN material oxygen-doped layers, a bottom AlN material oxygen-doped layer grows on the substrate, the AlN material layers and the AlN material oxygen-doped layers alternatively and cyclically grow on the bottom AlN material oxygen-doped layer, the top is the AlN material oxygen-doped layer, and an epitaxial layer grows on the top AlN material oxygen-doped layer. The invention also discloses a method of manufacturing the AlN buffer layer for the light emitting diode. The high-compactness AlN buffer layer is formed, the stress between the buffer layer and the substrate can be effectively released, the stress of the buffer layer can be better released, and the quality of a crystal of the AlN material growing on the buffer layer can be improved. 本发明公开种用于发光二极管的AlN缓冲层，该AlN缓冲层生长于衬底上，由AlN材料层和AlN材料掺氧层构成，在衬底上生长底层AlN材料掺氧层，在底层AlN材料掺氧层上依次交替循环生长AlN材料层和AlN材料掺氧层，顶层为AlN材料掺