Flip LED chip based on conductive DBR structure and manufacturing method thereof

The invention discloses a flip LED chip based on a conductive DBR structure and a manufacturing method thereof. A buffer layer, an N-GaN layer, an active layer and a P-GaN layer are sequentially grown on a substrate. The active layer and the P-GaN layer are etched to form a step and to expose part of the N-GaN layer. A DBR conductive reflection layer and a metal reflection layer are sequentially formed on the step of the P-GaN layer. An N metal conductive layer and a current expansion bar are arranged in the exposed portion of the N-GaN layer. An insulating layer is formed on the metal reflective layer and on the exposed portions of the N metal conductive layer and the N-GaN layer. Multiple through holes are formed on the insulating layer. A P eutectic layer and an N eutectic layer are formed on the insulating layer. The P eutectic layer is connected with the metal conductive layer via the through holes, and the N eutectic layer is connected with the N metal conductive layer via the through holes. The insulat