Thin film transistor fabrication method and array substrate fabrication method

The embodiment of the invention relates to a thin film transistor fabrication method and an array substrate fabrication method. The thin film transistor fabrication method comprises the process of forming a grid pattern, an active layer pattern and a pattern of a source and a drain on a substrate, a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JIN ZAIGUANG, WANG XIAOLIN, JIN XIZHE, CUI RONGGE, ZHENG ZAIWEN, MEI WENLIN, XU ZHUO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The embodiment of the invention relates to a thin film transistor fabrication method and an array substrate fabrication method. The thin film transistor fabrication method comprises the process of forming a grid pattern, an active layer pattern and a pattern of a source and a drain on a substrate, and is characterized by specifically comprises the steps of forming an active layer thin film, forming a pattern of an etch blocking layer on the active layer thin film, forming the pattern of the source and the drain on the pattern of the etch blocking layer, and etching the active layer thin film by taking the pattern of the etch blocking layer and the pattern of the source and the drain as a mask so as to form the active layer pattern. According to the embodiment of the invention, a mask plate is not used in the process of forming an active layer, a mask plate is shared when the source and the drain are formed, and continuous etching is carried out at the same time. A semi-transparent mask plate is not applied in