Method For Manufacturing Semiconductor Device

Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape. 本发明的各个实施例涉及制造半导体器件的方法。提供了种改进了半导体器件的制造效率的制造半导体器件的方法。该制造半导体器件的方法包括以下步骤：(a)在晶片(半导体晶片)的正表面侧处形成电路，该晶片具有正表面和与正表面相对的背表面；(b)按照中心部分比周缘部分更薄的方式，研磨晶片的背表面，该晶片具有中