Method for wet stripping silicon-containing organic layers
A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silic...
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| creator | DAVID DEKRAKER JEFFREY M. LAUERHAAS ANTHONY S. RATKOVICH ERIK R. BERG JEFFERY W. BUTTERBAUGH ROBERT THOMAS JOHN MATZ |
| description | A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF).
描述了种用于从微电子工件剥离材料的方法。该方法包括：接收具有露出由硅和有机材料构成的层的表面的工件；以及将工件放置在湿法清洗室中。在湿法清洗室中，通过将工件的表面暴露于含硫酸组合物的第剥离剂，然后任选地将工件的表面暴露于含稀氢氟酸(dHF)的第二剥离剂以从工件去除由硅和有机材料构成的层。 |
| format | Patent |
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描述了种用于从微电子工件剥离材料的方法。该方法包括：接收具有露出由硅和有机材料构成的层的表面的工件；以及将工件放置在湿法清洗室中。在湿法清洗室中，通过将工件的表面暴露于含硫酸组合物的第剥离剂，然后任选地将工件的表面暴露于含稀氢氟酸(dHF)的第二剥离剂以从工件去除由硅和有机材料构成的层。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161012&DB=EPODOC&CC=CN&NR=106024620A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161012&DB=EPODOC&CC=CN&NR=106024620A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVID DEKRAKER</creatorcontrib><creatorcontrib>JEFFREY M. LAUERHAAS</creatorcontrib><creatorcontrib>ANTHONY S. RATKOVICH</creatorcontrib><creatorcontrib>ERIK R. BERG</creatorcontrib><creatorcontrib>JEFFERY W. BUTTERBAUGH</creatorcontrib><creatorcontrib>ROBERT THOMAS JOHN MATZ</creatorcontrib><title>Method for wet stripping silicon-containing organic layers</title><description>A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF).
描述了种用于从微电子工件剥离材料的方法。该方法包括：接收具有露出由硅和有机材料构成的层的表面的工件；以及将工件放置在湿法清洗室中。在湿法清洗室中，通过将工件的表面暴露于含硫酸组合物的第剥离剂，然后任选地将工件的表面暴露于含稀氢氟酸(dHF)的第二剥离剂以从工件去除由硅和有机材料构成的层。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyTS3JyE9RSMsvUihPLVEoLinKLCjIzEtXKM7MyUzOz9MF4pLEzDyQUH5RemJeZrJCTmJlalExDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2Jd_YzNDAzMDIxMzJwNCZGDQCgqC9e</recordid><startdate>20161012</startdate><enddate>20161012</enddate><creator>DAVID DEKRAKER</creator><creator>JEFFREY M. LAUERHAAS</creator><creator>ANTHONY S. RATKOVICH</creator><creator>ERIK R. BERG</creator><creator>JEFFERY W. BUTTERBAUGH</creator><creator>ROBERT THOMAS JOHN MATZ</creator><scope>EVB</scope></search><sort><creationdate>20161012</creationdate><title>Method for wet stripping silicon-containing organic layers</title><author>DAVID DEKRAKER ; JEFFREY M. LAUERHAAS ; ANTHONY S. RATKOVICH ; ERIK R. BERG ; JEFFERY W. BUTTERBAUGH ; ROBERT THOMAS JOHN MATZ</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106024620A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVID DEKRAKER</creatorcontrib><creatorcontrib>JEFFREY M. LAUERHAAS</creatorcontrib><creatorcontrib>ANTHONY S. RATKOVICH</creatorcontrib><creatorcontrib>ERIK R. BERG</creatorcontrib><creatorcontrib>JEFFERY W. BUTTERBAUGH</creatorcontrib><creatorcontrib>ROBERT THOMAS JOHN MATZ</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVID DEKRAKER</au><au>JEFFREY M. LAUERHAAS</au><au>ANTHONY S. RATKOVICH</au><au>ERIK R. BERG</au><au>JEFFERY W. BUTTERBAUGH</au><au>ROBERT THOMAS JOHN MATZ</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for wet stripping silicon-containing organic layers</title><date>2016-10-12</date><risdate>2016</risdate><abstract>A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF).
描述了种用于从微电子工件剥离材料的方法。该方法包括：接收具有露出由硅和有机材料构成的层的表面的工件；以及将工件放置在湿法清洗室中。在湿法清洗室中，通过将工件的表面暴露于含硫酸组合物的第剥离剂，然后任选地将工件的表面暴露于含稀氢氟酸(dHF)的第二剥离剂以从工件去除由硅和有机材料构成的层。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for wet stripping silicon-containing organic layers |
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