Method for wet stripping silicon-containing organic layers

A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF). 描述了种用于从微电子工件剥离材料的方法。该方法包括：接收具有露出由硅和有机材料构成的层的表面的工件；以及将工件放置在湿法清洗室中。在湿法清洗室中，通过将工件的表面暴露于含硫酸组合物的第剥离剂，然后任选地将工件的表面暴露于含稀氢氟酸(dHF)的第二剥离剂以从工件去除由硅和有机材料构成的层。