Flexible ferroelectric memory and preparation method thereof
The invention discloses a flexible ferroelectric memory and a preparation method thereof. The flexible ferroelectric memory comprises a single silicon nano-film channel layer arranged on a flexible substrate layer. The single silicon nano-film channel layer is provided with a source electrode and a...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a flexible ferroelectric memory and a preparation method thereof. The flexible ferroelectric memory comprises a single silicon nano-film channel layer arranged on a flexible substrate layer. The single silicon nano-film channel layer is provided with a source electrode and a drain electrode thereon. The source electrode and the drain electrode are provided with a barrier layer thereon. The barrier layer is provided with a ferroelectric polymer layer thereon. The ferroelectric polymer layer is provided with a gate electrode thereon. The invention also provides a preparation method of the flexible ferroelectric memory. According to the flexible ferroelectric memory and the preparation method thereof, the flexible ferroelectric memory of the abovementioned structure can be prepared at a temperature below 150 DEG C. The prepared flexible ferroelectric memory is good in on-off state under a bias voltage, and the on-off voltage of the flexible ferroelectric memory is about +/- 4V. The on-off |
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